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Laser-Induced Chemical Vapor Deposition of Ge-Se Thin Films

Published online by Cambridge University Press:  25 February 2011

Tongsan D. Xiao  and
Peter R. Strutt
Tongsan D. Xiao
Affiliation:
The University of Connecticut, Institute of Materials Science and Department of Metallurgy, U-136, Storrs, CT 06268
Peter R. Strutt
Affiliation:
The University of Connecticut, Institute of Materials Science and Department of Metallurgy, U-136, Storrs, CT 06268
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Abstract

The synthesis of Ge-Se deposits has been demonstrated by using continuous wave CO2 laser excited reactions of GeC14 and Se2Cl2 precursors, each transported in an argon carrier gas. The deposited Ge-Se layers are rich in Ge with a composition of 70% of Ge and 30% of Se. Microstructural examinations reveal that the microstructure consists of amorphous Ge-Se particles ranging in diameter from 2000 Å to 7000 Å. Suggestions are made for the possible mechanisms that might occur during film deposition including, pyrolytic reactions, multiphoton dissociations, and Volmer-Weker film growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 129: Symposium B – Laser and Particle-Beam Modification of Chemical Processes on Surfaces , 1988 , 207
Copyright
Copyright © Materials Research Society 1989

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References

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