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Laser-Assisted Low Temperature Processing of PZT Thin Films

Published online by Cambridge University Press:  10 February 2011

Yongfei Zhu ,
Jinsong Zhu ,
Y. J. Song  and
S. B. Desu
Yongfei Zhu
Affiliation:
Department of Materials Science and Engineering, Virginia Tech, VA 24061-0237
Jinsong Zhu
Affiliation:
Department of Materials Science and Engineering, Virginia Tech, VA 24061-0237
Y. J. Song
Affiliation:
Department of Materials Science and Engineering, Virginia Tech, VA 24061-0237
S. B. Desu
Affiliation:
Department of Materials Science and Engineering, Virginia Tech, VA 24061-0237
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Abstract

A novel method for lowering processing temperature of ferroelectric Pb(Zr1−xTix)O3 (PZT) thin films was developed utilizing a laser-assisted two-step process. In the first step, perovskite phase was initiated in the PZT films by subjecting the films to a fornace anneal at low temperatures in the range of 470 °C to 550 °C depending on the Zr/Ti ratio. Later, the films were laser-annealed (using krF excimer laser) at room temperature to grow the perovskite phase, and to improve microstructure and ferroelectric properties. It was found that this two-step process was very effective in producing excellent quality ferroelectric PZT films at low temperatures. It should be noted that although laser annealing of amorphous and/or pyrochlore films directly (one-step process) produces perovskite phase, the ferroelectric properties of these films, irrespective of the composition, were rather unattractive. Some possible reasons for the ineffectiveness of the one-step process were discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 493: Symposium U – Ferroelectric Thin Film VI , 1997 , 305
Copyright
Copyright © Materials Research Society 1998

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References

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