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Laser Studies of the SiH Radical/Surface Interaction During Deposition of a thin Film
Published online by Cambridge University Press: 25 February 2011
Abstract
This paper presents a new method for studying the interaction of radicals with the surface of a depositing film using a combination of laser spectroscopy and molecular beam techniques. The reactivity of SiH molecules with the surface of a depositing a-Si:H film is measured to be at least 0.95, with no strong dependence on rotational state.
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- Copyright © Materials Research Society 1989