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Laser Studies of the Interaction of SiO with the Surface of a Thin Film

Published online by Cambridge University Press:  25 February 2011

Pauline Ho ,
Richard J. Buss  and
M. E. Weber
Pauline Ho
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-5800
Richard J. Buss
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-5800
M. E. Weber
Affiliation:
Texas Instruments, Dallas, TX 75265
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Abstract

The interaction of SiO radicals from a SiCl4/O2 plasma with the surface of a depositing thin film is studied with the IRIS (Imaging of Radicals Interacting with Surfaces) technique, which combines spatially-resolved laser-induced fluorescence with molecular beam methods. In contrast to previous results for SiH, SiO appears not to react at the surface of the depositing film, but desorbs with a cosine spatial distribution for a wide range of substrate temperatures. No evidence is observed for specular scattering of the molecules.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 204: Symposium E – Chemical Perspectives of Microelectronic Materials II , 1990 , 483
Copyright
Copyright © Materials Research Society 1991

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References

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