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Laser Processing, Characterization, and Modeling of Epitaxial Si/TiN/Si (100) Heterostructures

Published online by Cambridge University Press:  01 January 1992

Rina Chowdhury ,
X. Chen ,
K. Jagannadham  and
J. Narayan
Rina Chowdhury
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC 27695–7916
X. Chen
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC 27695–7916
K. Jagannadham
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC 27695–7916
J. Narayan
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC 27695–7916
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Abstract

We have successfully deposited multilayer Si/ITiN/Si(100) epitaxial heterostructures at a substrate temperature of 600°C in a chamber maintained at a vacuum of ∼10−7 torr using pulsed laser (KrF: λ = 248 nm, τ = 25 ns) deposition. This silicon-on-conductor device configuration has potential applications in three-dimensional integrated circuits and radiation hard devices.The two interfaces were quite sharp without any indication of interfacial reaction between them. The epitaxial relationship was found to be <100> Si II<100> TiN II<100> Si. In the plane, four unit cells of TiN matched with three unit cells of silicon with less than 4.0% misfit. This domain matching epitaxy provides the mechanism of epitaxial growth in systems with large lattice mismatch. Energetics and growth characteristics of such domain matching epitaxy in the high lattice mismatch Si/TiN/Si(100) system and possible device implications are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 285: Symposium I – Laser Ablation in Materials Processing–Fundamentals and Applications , 1992 , 501
Copyright
Copyright © Materials Research Society 1993

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References

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