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Laser Melting and Recrystallization of Bulk Si by Nanosecond UV Laser Pulses

  • C. Garcia (a1) (a2), A.C. Prieto (a1) (a2), J. Jimenez (a1) (a3) and L.F. Sanz (a1) (a3)

Abstract

Laser ablation of semiconductors presents an increasing interest for both thin film growth and surface modification. We present herein a study of the damage produced in bulk silicon by nanoseconds UV laser pulses with energy above the melting threshold. This study is carried out with a Raman microprobe. Polarized microRaman was used to reveal the main changes in the melted and recrystallized volume. These changes were observed in the liquid/solid boundaries, where tensile stress due to the induced thermal wave is more important. The morphology of the melted region evidences matter accumulation at such a boundary.

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Laser Melting and Recrystallization of Bulk Si by Nanosecond UV Laser Pulses

  • C. Garcia (a1) (a2), A.C. Prieto (a1) (a2), J. Jimenez (a1) (a3) and L.F. Sanz (a1) (a3)

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