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Laser Lateral Crystallization of Thin Au and Cu Films on SiO2

Published online by Cambridge University Press:  01 February 2011

J.E. Kline  and
J.P. Leonard
J.E. Kline
Affiliation:
Department of Materials Science and Engineering, University of Pittsburgh, Pittsburgh, PA 15261
J.P. Leonard
Affiliation:
Department of Materials Science and Engineering, University of Pittsburgh, Pittsburgh, PA 15261
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Abstract

Rapid lateral solidification via excimer laser melt processing is demonstrated in 200 nm thick pure Cu and Au films, encapsulated above and below by amorphous SiO2. Mask projection irradiation is used to selectively melt lines 3 to 30 m wide in the metal films, with lateral solidification proceeding transversely from the edge to the middle of the line. Encapsulation with the SiO2 overlayer and control of the fluence are found to be crucial parameters necessary to prevent dewetting while the films are molten. Transmission electron microscopy reveals large columnar grains with twin structures and other defects typical of rapid solidification.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 875: Symposium O – Thin Films - Stresses and Mechanical Properties XI , 2005 , O6.6
Copyright
Copyright © Materials Research Society 2005

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