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Laser Irradiation of Nickel: Defect Structures and Surface Alloying

Published online by Cambridge University Press:  15 February 2011

L. Buene ,
D.C. Jacobson ,
S. Nakahara ,
J.M. Poate ,
C.W. Draper  and
J.K. Hirvonen
L. Buene
Affiliation:
Bell Laboratories, Murray Hill, New Jersey 07974; Washington, DC 20375
D.C. Jacobson
Affiliation:
Bell Laboratories, Murray Hill, New Jersey 07974; Washington, DC 20375
S. Nakahara
Affiliation:
Bell Laboratories, Murray Hill, New Jersey 07974; Washington, DC 20375
J.M. Poate
Affiliation:
Bell Laboratories, Murray Hill, New Jersey 07974; Washington, DC 20375
C.W. Draper
Affiliation:
Western Electric Engineering Research Center, Princeton, New Jersey 08540;
J.K. Hirvonen
Affiliation:
Naval Research Laboratory, Washington, DC 20375
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Abstract

Surface layers of Ni crystals have been melted with Q-switched Nd-YAG laser radiation. The epitaxially regrown surface layers show significant differences between 〈100〉 and 〈111〉 crystals cut from the same boule. The 〈100〉 crystals exhibit a dislocation cell structure with a dislocation density of l011 - 1012 cm-2. The 〈111〉 crystals contain a laterally uniform dislocation network resulting in a much higher dislocation density for the 〈111〉 surface. The elements Ag, Au, Pd, Sn and Ta have been implanted into Ni single crystals at surface concentrations of up to 20 at %. All the as- implanted systems demonstrate solid solubility. We have used these implanted systems to study the alloys formed by laser melting of Ni. In all systems, with the exception of Ag, 100% of the atoms are trapped on lattice sites.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1: Symposium – Laser and Electron-Beam Solid Interactions in Materials Processing , 1980 , 583
Copyright
Copyright © Materials Research Society 1981

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References

REFERENCES

1. Preece, C.M. and Hirvonen, J.K. (eds.), Ion Implantation Metallurgy. (The Metallurgical Society of AIME, Warrendale, Pa., 1980).Google Scholar
2. Ferris, S.D., Leamy, H.J. and Poate, J.M. (eds.), Laser and Electron Beam Processing of Materials. (Academic Press, New York, 1980).Google Scholar
3. White, C.W. and Peercy, P.S. (eds.), Laser and Electron Beam Processing of Materials. (Academic Press, New York, 1980).Google Scholar
4. Draper, C.W., Preece, C.M., Jacobson, D.C., Buene, L. and Poate, J.M., in Ref. 3 above, pp. 721–727.Google Scholar
5. Buene, L., Poate, J.M., Jacobson, D.C., Draper, C.W. and Hirvonen, J.K., Appl. Phys. Lett. 37, 385 (1980).Google Scholar
6. Draper, C.W., Meyer, L.S., Buene, L., Jacobson, D.C. and Poate, J.M., Appl. Surf. Sci., in press.Google Scholar
7. Hansen, M., Constitution of Binary Alloys, 2nd Ed. (McGraw-Hill, New York, 1958).Google Scholar
8. Celler, G.K., Poate, J.M. and Kimerling, L.C., Appl. Phys. Lett. 32, 464 (1978).Google Scholar
9. Simons, A.L., Private Communication.Google Scholar
10. Buene, L., Nakahara, S., Poate, J.M., Jacobson, D.C., Draper, C.W. and Cullis, A.G., submitted to Appl. Phys. Lett.Google Scholar
11. Draper, C.W., Buene, L., Poate, J.M., Jacobson, D.C. and Cullis, A.G., submitted to Appl. Opt.Google Scholar
12. Kaufmann, E.N., Buene, L. and Draper, C.W., this conference.Google Scholar
13. Poate, J.M., Borders, J.A., Cullis, A.G. and Hirvonen, J.K., Appl. Phys. Lett. 30, 365 (1977).Google Scholar