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Laser Ablation Deposition of Ga2S3-La2S3 Glass Films

Published online by Cambridge University Press:  15 February 2011

R. Asal ,
P.E. Rivers  and
H.N. Rutt
R. Asal
Affiliation:
Department of Electronics and Computer Science, University of Southampton, Highfield, Southampton, SO17 IBJ, UK. h.rutt@ecs.soton.ac.uk
P.E. Rivers
Affiliation:
Department of Electronics and Computer Science, University of Southampton, Highfield, Southampton, SO17 IBJ, UK. h.rutt@ecs.soton.ac.uk
H.N. Rutt
Affiliation:
Department of Electronics and Computer Science, University of Southampton, Highfield, Southampton, SO17 IBJ, UK. h.rutt@ecs.soton.ac.uk
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Abstract

Gallium - lanthanum sulphide glasses (GLS) show wide range transparency and low non radiative relaxation rates for dopant ions such as Ho3+, Er3+ etc. They also show permanent photomodification of the refractive index under visible illumination. We report laser ablation deposition of these glasses and preliminary results on film stoichiometry and deposition rate as a function of excimer laser fluence. The sulphur to metal and Ga/La ratios are found to have marked fluence dependencies. The films show considerably more Urbach tail absorption than bulk material. A novel method has been developed for mapping the permanent photomodified index.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 397: Symposium B – Advanced laser Processing of Materials-Fundamentals and Applications , 1995 , 253
Copyright
Copyright © Materials Research Society 1996

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References

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