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Large-Grain Doped Poly-Si Films Fabricated Using New Excimer Laser Annealing Technique

  • Hiroshi Iwata (a1), Tomoyuki Nohda (a1), Satoshi Ishida (a1), Takashi Kuwahara (a1), Keiichi Sano (a1), Hiroyuki Kuriyama (a1), Shigeru Noguchi (a1), Hiroshi Hanafusa (a1), Keiichi Kiyama (a1), Shinya Tsuda (a1), Shoichi Nakano (a1) and Yukinori Kuwano (a1)...

Abstract

The grain size of phosphorous (P)-doped poly-Si film has been enlarged to about 5000 Å by controlling the solidification velocity of molten Si during ArF excimer laser annealing. The drastically enlarged grain has few defects inside the grain. It has been confirmed that control of the solidification velocity is effective for P-doped poly-Si similar to the case of non-doped poly-Si films. In addition, a sheet resistance of 80 Ω/□ (ρ = 4 × 10-4 Ω · cm) has been achieved for very thin (500 Å) films by recrystallizing PECVD P-doped a-Si films.

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Large-Grain Doped Poly-Si Films Fabricated Using New Excimer Laser Annealing Technique

  • Hiroshi Iwata (a1), Tomoyuki Nohda (a1), Satoshi Ishida (a1), Takashi Kuwahara (a1), Keiichi Sano (a1), Hiroyuki Kuriyama (a1), Shigeru Noguchi (a1), Hiroshi Hanafusa (a1), Keiichi Kiyama (a1), Shinya Tsuda (a1), Shoichi Nakano (a1) and Yukinori Kuwano (a1)...

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