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Large-Area Pulsed Laser Deposition of Tantalum Oxide Films

Published online by Cambridge University Press:  10 February 2011

S. Boughaba ,
M. U. Islam ,
G. I. Sproule  and
M. J. Graham
S. Boughaba
Affiliation:
National Research Council CanadaIntegrated Manufacturing Technologies Institute, 800 Collip Circle, London, ON, N6G 4X8
M. U. Islam
Affiliation:
National Research Council CanadaIntegrated Manufacturing Technologies Institute, 800 Collip Circle, London, ON, N6G 4X8
G. I. Sproule
Affiliation:
National Research Council CanadaInstitute for Microstructural Sciences, 1500 Montreal Road, Ottawa, ON, K1A 0R6
M. J. Graham
Affiliation:
National Research Council CanadaInstitute for Microstructural Sciences, 1500 Montreal Road, Ottawa, ON, K1A 0R6
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Abstract

A large-area pulsed laser deposition (PLD) technique was used to uniformly grow tantalum pentoxide (Ta2O5) films on silicon wafers of 75 mm diameter. A KrF excimer laser beam was focused onto a 90 mm diameter Ta2O5 target to induce its ablation in oxygen gas ambient. The large-area coverage was obtained by rastering the laser beam over the radius of the rotating target, while the substrate was rotated simultaneously.

The tantalum oxide films were characterized in terms of uniformity of thickness, composition, structure, and optical properties across the substrate. Average deviations typically below 1% were achieved in thickness, composition, indices of refraction and optical energy band-gap. Identical X-ray diffraction spectra were obtained at the center, middle of radius and edge of the wafers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 567: Symposium R – Ultrathin SiO2 and Higg-K Materials for ULSI Gate Dielectrics , 1999 , 527
Copyright
Copyright © Materials Research Society 1999

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References

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