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Large Area Electron Beam Enhanced Reactive Etching of SiO2

  • P. Kirk Boyer (a1), Tim Verhey (a2) and Jorge J. Rocca (a2)


A large area (2.8 cm2) electron beam source has been developed, characterized, and applied to anisotropic etching of SiO2 masked with photoresist. This beam operates at high pressures (up to 100 mTorr), in reactive gases, and at more than 10 mA/cm2. Beam current can be controlled in several ways independently from beam energy. The 100 – 900 eV low energy beam propagates with collimation through several cm of reactive gas, and is believed to minimize space charge defocusing by collisionally ionizing the working gas.



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