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Kinetics of Surface Roughening and Smoothing During Ion Sputtering

Published online by Cambridge University Press:  15 February 2011

E. Chason ,
T. M. Mayer  and
A. J. Howard
E. Chason
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185–0350
T. M. Mayer
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185–0350
A. J. Howard
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185–0350
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Abstract

We have measured the kinetics of roughness evolution during low energy ion sputtering of SiO2 surfaces using in situ X-ray reflectivity. Sputtering with heavy ions (Xe) leads to rapid roughening of the surface that can not be explained by a simple random removal process. Subsequent bombardment with light ions (He, H) leads to an exponential decrease in the surface roughness. These kinetics are explained quantitatively by a linear model that contains a balance between smoothing by surface diffusion and viscous flow and roughening by sputter removal of Material. A curvature dependent sputter yield leads to amplification of a limited range of spatial frequencies on the surface and the formation of a ripple topography.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 317: Symposium B – Mechanisms of Thin Film Evolution , 1993 , 91
Copyright
Copyright © Materials Research Society 1994

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References

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