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Kinetics of Ge Segregation in the Presence of Sb During Molecular Beam Epitaxy

Published online by Cambridge University Press:  22 February 2011

S. Fukatsu ,
K. Fujita ,
H. Yaguchi ,
Y. Shiraki  and
R. Ito
S. Fukatsu
Affiliation:
Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4–6–1 Komaba, Meguro-ku, Tokyo 153, Japan
K. Fujita
Affiliation:
Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4–6–1 Komaba, Meguro-ku, Tokyo 153, Japan
H. Yaguchi
Affiliation:
Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4–6–1 Komaba, Meguro-ku, Tokyo 153, Japan
Y. Shiraki
Affiliation:
Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4–6–1 Komaba, Meguro-ku, Tokyo 153, Japan
R. Ito
Affiliation:
Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, 4–6–1 Komaba, Meguro-ku, Tokyo 153, Japan
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Extract

Kinetics of Ge segregation during molecular beam epitaxial growth is described. It is shown that the Ge segregation is self-limited in Si epitaxial overlayers due to a high concentration effect when the Ge concentration exceeds 0.01 monolayer (ML). As a result, segregation profiles of Ge are found to decay non-exponentially in the growth direction. This unusual Ge segregation was found to be suppressed with an adlayer of strong segregant, Sb, during the kinetic MBE growth. We develop a novel scheme to realize sharp Si/Ge interfaces with strong segregante. Lower limit of the effective amount of Sb for this was found to be 0.75 ML.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991 , 217
Copyright
Copyright © Materials Research Society 1991

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References

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