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Kinetics of Gas-Phase Chemical Reactions and Growth of a-SiC:H Films from Silane and Acetylene in a Remote Hydrogen Plasma Reactor

Published online by Cambridge University Press:  21 February 2011

N. M. Johnson ,
Paulo V. Santos ,
J. Walker  and
K. S. Stevens
N. M. Johnson
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
Paulo V. Santos
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
J. Walker
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
K. S. Stevens
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
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Abstract

Gas-phase chemical reactions of interest for the deposition of amorphous silicon carbide in a remote hydrogen plasma reactor have been quantitatively characterized with electron spin resonance, and the deposition of a-SiC:H from silane and acetylene is demonstrated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 703
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

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