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Kinetics of Both Defects and Electron and Hole Diffusion Lengths During Light-Soaking in a-Si:H Films

Published online by Cambridge University Press:  10 February 2011

A. S. Abramov ,
A. I. Kosarev ,
P. Roca i Cabarrocas  and
A. J. Vinogradov
A. S. Abramov
Affiliation:
SSE Department, Ioffe Physical-Technical Institute, St.-Petersburg, 194021, Russia, kosarev@kos.ioffe.rssi.ru
A. I. Kosarev
Affiliation:
SSE Department, Ioffe Physical-Technical Institute, St.-Petersburg, 194021, Russia, kosarev@kos.ioffe.rssi.ru
P. Roca i Cabarrocas
Affiliation:
labaratoire de Physique des interfaces et des Couches Minces (UPR 258 CNRS), Ecole Polytechnique, 91128 Palaiseau Codex, France
A. J. Vinogradov
Affiliation:
SSE Department, Ioffe Physical-Technical Institute, St.-Petersburg, 194021, Russia, kosarev@kos.ioffe.rssi.ru
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Abstract

Concomitant studies of kinetics of defects ND(t), photoconductivity σph(t), electron and hole diffision lengths Le(t), Lh(t) during light soaking have been carried out. The data have been fitted by stretched exponential expressions and characteristic parameters of kinetics have been determined. Correlation between the kinetics is discussed. In contrast to Nd(t), σph(t) and Le(t), the hole diffusion length Lh(t) was observed to remain constant during initial time (˜ 103s) and then decreased with characteri stic time ˜ 104s.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 659
Copyright
Copyright © Materials Research Society 1996

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