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Kinetics and Thermodynamics of the Formation of Thin Film Titanium Diselicide

  • R.J. Kasica (a1), E.J. Cotts (a1) and R.G. Ahrens (a1)

Abstract

Multilayered difiiision couples consisting of alternating layers of titanium (Ti) and amorphous silicon (a-Si) have been fabricated using sputter deposition with a range of modulation lengths corresponding to an average composition of Ti33 Si67. We have used differential scanning calorimetry to measure the enthalpy evolved during the solid state reaction a-Si + Ti → C49-TiSi2 and have characterized the phases formed using x-ray diffraction analysis. An average measured enthalpy of formation, ΔΗ was found to be ΔΗ = -58 + 9 kJ/g atom for thin film samples. Using scanning and isothermal calorimetry measurements, we have also characterized the kinetics involved during the initial intermixing stage.

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Kinetics and Thermodynamics of the Formation of Thin Film Titanium Diselicide

  • R.J. Kasica (a1), E.J. Cotts (a1) and R.G. Ahrens (a1)

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