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The Kinetic Effects of Layering Sequence of Al-Ge-Ni Ohmic Contact Components on (001) GaAs

Published online by Cambridge University Press:  25 February 2011

W. V. Lampert ,
T. W. Haas  and
Paul H. Holloway
W. V. Lampert
Affiliation:
The Materials Directorate of Wright Laboratory, Wright-Patterson Air Force Base, Ohio 45433–6533
T. W. Haas
Affiliation:
The Materials Directorate of Wright Laboratory, Wright-Patterson Air Force Base, Ohio 45433–6533
Paul H. Holloway
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, Rorida 32611–2066
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Abstract

Electrical characterization has demonstrated dramatic differences in the amount of heat treatment time required to convert the ohmic contact metallizations from Schottky to ohmic behavior, depending on the layering sequence of the Al, Ge, and Ni metals. Additional time differences were found to be dependent on the doping concentration of the contact layer of the GaAs and on the heat treatment temperature. For samples with Ge at the metal-semiconductor interface, the time required to convert from Schottky to ohmic behavior varies inversely with the doping concentration of the contact layer and directly with heat treatment temperature. Samples with Ni at the metal-semiconductor interface converted from Schottky to ohmic behavior much faster and had a much smaller dependence on the doping concentration and the heat treatment temperature. Models to explain these observations in terms of interdiffusion of the components and phases formed will be proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 941
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Zuleeg, Rainer, Friebertshauser, P. E., Stephens, J. M., Watenabe, S. H., “Al-Ge Ohmie Contacts to n-type GaAs,” Electron Device Letters, Vol. EDL-7, No. 11, Pg. 603–604, 1986 Google Scholar
2. Zuleeg, Rainer, Friebertshauser, P. E., Stephens, J. M., Watenabe, S. H., “Al-Ge Ohmie Contacts to n-type GaAs,”Presentation at the Electrochemical Society Meeting, San Diego, Ca, 19 to 24 October, 1986 Google Scholar
3. Braslau, N., Gunn, J. B., and Staples, J. L., “Metal-Semiconductor Contacts for GaAs Bulk Effect Devices,” Solid - State Electronics, Vol. 10, Pg. 381–383, 1967 Google Scholar
4. Robinson, G. Y., “Metallurgical and Electrical Properties of Alloyed Ni/Au-Ge Films on N-type GaAs,” Solid-State Electronics, Vol. 18, Pg. 331–342, 1975 Google Scholar
5. Liliental-Weber, Z., Washburn, J., Musgrave, C., Weber, E. R., Zuleeg, R., Lampert, W. V., and Haas, T. W., “New Al-Ge-Ni Contacts on GaAs; Their Structure and Electrical Properties,” Materials Research Society Symposium Proceedings. Vol. 126, Pgs. 295–301, 1988 Google Scholar
6. Graham, R. J., Erkasya, H. H., and Roedel, R. J., “Preliminary Studies of the Al-Ge-Ni Ohmic Contacts to p- and n-type GaAs,” Journal of Electrochemical Society., Vol. 35, Pgs. 266–267, 1988 Google Scholar
7. Graham, R. J., Erkasya, H. H., Edwards, J. L., and Roedel, R. J., “High-resolution Transmission Electron Microscope Studies of an Al-Ge-Ni Ohmic Contact to GaAs,” Journal of Vacuum Science and Technology Vol. B 6, No. 5, Pgs. 1502–1505 1988 Google Scholar
8. Graham, R. J., Nelson, R. W., Williams, P., Haddock, T. B., Baaklini, E. P., and Roedel, R. J., “Investigation of the Structural and Electrical Properties of Al-Ge-Ni Contacts to GaAs.” Journal of Electronic Materials, Vol. 19, No. 11, Pgs. 1257–1263, 1990 CrossRefGoogle Scholar
9. Murakami, Masonari, Childs, K. D., Baker, John M., and Callegari, A., “Microstracture Studies of AuNiGe Ohmic Contacts to n-type GaAs,” Journal of Vacuum Science and Technology, Vol B 4, No. 4, Pgs. 903–911, 1986.Google Scholar
10. Ogawa, Masaki, “Alloying Behavior of Ni/Au/Ge Films on GaAs,” Journal of Applied Phvsics Vol. 51, No. 1, Pg. 406–412, Jan. 1980 Google Scholar
11. Anderson, W. T. Jr, Christou, A., Davey, J. E., “Development of Ohmic Contacts for GaAs Devices Using Epitaxial Ge Films,” IEEE Journal of Solid-State Circuits. Vol SC B4, Pg. 430–435, 1978 Google Scholar