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IV-VI Compound Semiconductor Mid-Infrared Vertical Cavity Surface Emitting Lasers Grown by MBE

Published online by Cambridge University Press:  10 February 2011

Z. Shi ,
G. Xu ,
P.J. McCann ,
X. M. Fang ,
N. Dai ,
W. W. Bewley ,
C. L. Felix ,
I. Vurgaftman  and
J. R Meyer
Z. Shi
Affiliation:
School of Electrical and Computer Engineering, 202 West Boyd, Norman OK 73019, shi@OU.edu
G. Xu
Affiliation:
School of Electrical and Computer Engineering, 202 West Boyd, Norman OK 73019
P.J. McCann
Affiliation:
School of Electrical and Computer Engineering, 202 West Boyd, Norman OK 73019
X. M. Fang
Affiliation:
School of Electrical and Computer Engineering, 202 West Boyd, Norman OK 73019
N. Dai
Affiliation:
Department of Physics and AstronomyUniversity of Oklahoma
W. W. Bewley
Affiliation:
Naval Research Laboratory, Washington, DC 20375
C. L. Felix
Affiliation:
Naval Research Laboratory, Washington, DC 20375
I. Vurgaftman
Affiliation:
Naval Research Laboratory, Washington, DC 20375
J. R Meyer
Affiliation:
Naval Research Laboratory, Washington, DC 20375
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Abstract

Mid-infrared vertical cavity surface emitting lasers (VCSELs) using PbSe as the active material and broadband high reflectivity Pb1−xSrxSe/BaF 2 distributed Bragg reflectors (DBR) as bottom and top mirrors were grown by molecular beam epitaxy. By pulsed optical pumping, this first IV-VI semiconductor VCSEL operated up to 290K at a wavelength of 4.5 µm. Further optimization of such VCSELs could lead to room temperature continuos wave operation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 607: Symposium OO – Infrared Applications of Semiconductors III , 1999 , 181
Copyright
Copyright © Materials Research Society 2000

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