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ITO/a-SiNx:H/a-Si:H Photodiode with Enhanced Photosensitivity and Reduced Leakage Current Using Polycrystalline ITO Deposited at Room Temperature

Published online by Cambridge University Press:  17 March 2011

S. Tao ,
Q. Ma ,
D. Striakhilev  and
A. Nathan
S. Tao
Affiliation:
Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario, Canada N2L 3G1
Q. Ma
Affiliation:
currently at: PerkinElmer Optoelectronics, Vaudreuil, Quebec, Canada J7V 8P7
D. Striakhilev
Affiliation:
Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario, Canada N2L 3G1
A. Nathan
Affiliation:
Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario, Canada N2L 3G1
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Abstract

We report an ITO/a-SiNx:H/a-Si:H MIS photodiode structure based on room temperature deposition of optically transparent polycrystalline ITO for applications in large area optical and x-ray imaging. The photodiode structure exhibits device characteristics with reduced leakage current and enhanced photosensitivity giving rise to a hundred-fold improvement in dynamic range. This notable improvement in performance is believed to be due to the reduced diffusion of oxygen from the ITO to the a-Si:H layer, and thus reducing the density of defect states inside the a-Si:H layer. The behavior of photo and dark current is consistent with an elaborate transport model for the Schottky barrier. The model agrees reasonably well with measurement data for the dark current and provides a consistent picture in terms of the photo current behavior in the MIS structure, where the insulating layer serves to reduce the oxygen diffusion.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A12.2
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

[1] Weisfield, Richard L., Mat. Res. Soc. Symp. Proc. 258, 1105 (1999).Google Scholar
[2] Street, R. A., Weisfield, R. L., Apte, R. B., Ready, S. E., Moore, A., Nguyen, M., Jackson, W. B. and Nylen, P., Thin Solid Films 296, 172 (1997).Google Scholar
[3] Ma, Q., Nathan, A., Mat. Res. Soc. Symp. Proc. (1999) to be published.Google Scholar
[4] Street, R. A., in Hydrogenated amorphous silicon, Cambridge University Press, Cambridge p.325, 319, (1991).Google Scholar
[5] Rhoderick, E. H., in Metal-semiconductor contacts, Clarendon Press, Oxford p.84, (1978).Google Scholar
[6] Sze, S. M., in Physics of Semiconductor Devices, John Wiley & Sons, New York p.256, (1981).Google Scholar
[7] Bardeen, John, Physical Review 71, 717 (1947).Google Scholar
[8] Jackson, W. B., Nemanich, R. J., Thompson, M. J., and Wacker, B., Physical Review B 33, 6936 (1986).Google Scholar
[9] Padovani, F. A., Stratton, R., Solid-State Electronics 9, 695 (1966).Google Scholar
[10] Crowell, C. R., Rideout, V. L., Solid-State Electronics 12, 89 (1969).Google Scholar
[11] Ma, Q., Nathan, A., Proceedings of the Fourth Symposium on Thin Film Transistor Technologies, ed. By Kuo, Y., 408 (1998).Google Scholar
[12] Mota, F. de Brito, Justo, J. F. and Fazzio, A., Phys. Rev. B 58, 8323 (1998).Google Scholar
[13] Liu, X. et al. , J. of Non-Crystalline Solids 137&138, 1131 (1991).Google Scholar
[14] Vink, T. J., Nieuwesteeg, K. J. B. M. and Oversluizen, G., J. Appl. Phys. 71, 4399 (1992).Google Scholar