Hostname: page-component-84b7d79bbc-g7rbq Total loading time: 0 Render date: 2024-07-31T08:39:25.075Z Has data issue: false hasContentIssue false
  • English
  • Français

Isolation of Temperature Effects on the Kinetics of Light Induced Defect Generation in a-Si:H

Published online by Cambridge University Press:  21 February 2011

L. Benatar ,
M. Grimbergen ,
A. Fahrenbruch ,
A. Lopez-Otero ,
D. Redfield  and
R. Bube
L. Benatar
Affiliation:
Stanford University, Department of Materials Science and Engineering Stanford, CA 94305–2205
M. Grimbergen
Affiliation:
Stanford University, Department of Materials Science and Engineering Stanford, CA 94305–2205
A. Fahrenbruch
Affiliation:
Stanford University, Department of Materials Science and Engineering Stanford, CA 94305–2205
A. Lopez-Otero
Affiliation:
Stanford University, Department of Materials Science and Engineering Stanford, CA 94305–2205
D. Redfield
Affiliation:
Stanford University, Department of Materials Science and Engineering Stanford, CA 94305–2205
R. Bube
Affiliation:
Stanford University, Department of Materials Science and Engineering Stanford, CA 94305–2205
Get access

Abstract

Data are presented here that show the effects of temperature on the kinetics of metastable defect formation in undoped a-Si:H over the range 45°-110°C. CPM (Constant Photocurrent Method), photoconductivity, and dark conductivity measurements were made and provide independent checks of the defect generation behavior. A stretched exponential description of defect formation as a function of time was used to fit the CPM defect density data. The stretched exponential time constant, τSE, is thermally activated with an apparent activation energy of 1 eV, a value that agrees well with data for defect anneal and solar cell degradation. The data indicate that thermal terms are not negligible for temperatures as low as 45°C, and therefore should be included in any model of the kinetics of defect formation. The role of adistribution of anneal energies and the regimes of dominance of thermal and optical rate terms are discussed in the context of the model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 461
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Redfield, D. and Bube, R.H., Appl. Phys. Lett. 54, 1037 (1989).Google Scholar
2. Bube, R.H., Echeverria, L., and Redfield, D., Appl. Phys. Lett. 57, 79 (1990).Google Scholar
3. Chen, L. and Yang, L., J. Non-Cryst. Solids 137&138, 1185 (1991).Google Scholar
4. Kakalios, J., Street, R., and Jackson, W., Phys. Rev. Lett. 59, 1037 (1987).Google Scholar
5. Jackson, W.B. and Kakalios, J., Phys. Rev. B 37, 1020 (1988).Google Scholar
6. Vanecek, M., Kocka, J., Stuchlik, J., Kosisek, Z., Stika, O., and Triska, A., Sol. Energy Mater. 8, 411(1983).Google Scholar
7. Grimbergen, M., to be publishedGoogle Scholar
8. Wyrsch, N., Finger, F., McMahon, T., and Vanecek, M., J. Non-Cryst. Solids 137&138, 357 (1991).Google Scholar
9. Stuke, J., J. Non-Cryst. Solids 97&98, 1 (1987).Google Scholar
10. Redfield, D., this conferenceGoogle Scholar
11. Bube, R., to be publishedGoogle Scholar
12. Shepard, K., Smith, Z.E., Aljishi, S., and Wagner, S., Appl. Phys. Lett. 53, 1644 (1988).Google Scholar