Hostname: page-component-77c89778f8-gq7q9 Total loading time: 0 Render date: 2024-07-20T06:48:17.715Z Has data issue: false hasContentIssue false
  • English
  • Français

Irreversible Tensile Stress Development in PECVD Silicon Nitride Films

Published online by Cambridge University Press:  01 February 2011

Michael P. Hughey  and
Robert F. Cook
Michael P. Hughey
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455, USA
Robert F. Cook
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455, USA
Get access

Abstract

The thermo-mechanical behavior of plasma-enhanced chemical vapor deposited (PECVD) silicon nitride films are investigated during thermal cycling and annealing. It is well known that PECVD films have a large amount of incorporated hydrogen that evolves on heating. This reduction in hydrogen is shown to be directly responsible, via constrained volume decrease, for irreversible increases in tensile stress. It is demonstrated that no stress equilibrium is attained during very long time anneals. The thermal cycling behavior of PECVD films can be modeled by chemical reaction theory, with the irreversible development of film stress a mechanical consequence. The model assumes first-order reaction kinetics of Si-H and N-H bonds, which react to form molecular hydrogen and reformed network bonds. The activation energy of reaction is not single-valued, indicative of the strong influence that the local bonding environment has on bond energies. If the incorporated hydrogen reactant pairs are assumed to be normally distributed with activation energy, irreversible stress development is well modeled, and the mean activation energy ranges from 2.44 to 2.93 eV for 150 to 300 °C deposited films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 795: Symposium U – Thin Films - Stresses and Mechanical Properties X , 2003 , U1.6
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Budhani, R. C., Bunshah, R. F., and Flinn, P. A., Appl. Phys. Lett. 52, 284 (1988).Google Scholar
2. Thurn, J. and Cook, R. F., J. Appl. Phys. 91, 1988 (2002).Google Scholar
3. Keller, R.-M., Baker, S. P., Arzt, E., Acta Mater. 47, 415 (1999).Google Scholar
4. Stoney, G.G., Proc. R. Soc. Lond. A 82, 172 (1909).Google Scholar
5. Hughey, M. P. and Cook, R. F., in Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics, edited by McKerrow, A., Leu, J., Kraft, O., and Kikkawa, T. (Mater. Res. Soc. Proc. 766, Pittsburgh, PA, 2003) E6.3. Google Scholar
6. Lanford, W. A. and Rand, M. J., J. Appl. Phys. 49, 2473 (1978).Google Scholar
7. Santos-Filho, P., Stevens, G., Lu, Z., Koh, K., Lucovsky, G., in Thermodynamics and Kinetics of Phase Transformations, edited by Im, J.S., Park, B., Greer, A.L., Stephenson, G.B. (Mater. Res. Soc. Proc. 398, Pittsburgh, PA, 1996) 345.Google Scholar
8. Fedders, P. A., in Amorphous Silicon Technology, edited by Hack, M., Schiff, E. A., Powell, M., Matsuda, A., and Madan, A. (Mater. Res. Soc. Proc. 377, Pittsburgh, PA, 1995) 269.Google Scholar
9. Van de Walle, C. G., Phys. Rev. B 49, 4579 (1994).Google Scholar