Hostname: page-component-848d4c4894-nmvwc Total loading time: 0 Render date: 2024-07-04T23:14:05.121Z Has data issue: false hasContentIssue false
  • English
  • Français

Iron Precipitation and Dissolution in Float-Zone Silicon

Published online by Cambridge University Press:  10 February 2011

Deepak A. Ramappa  and
Worth B. Henley
Deepak A. Ramappa
Affiliation:
ramappa@sunflash.eng.usf.edu
Worth B. Henley
Affiliation:
Center for Microelectronics Research, ENB118, University of South Florida, Tampa, FL33620
Get access

Abstract

A quantitative analysis of the phase changes of iron in silicon from interstitial to precipitate phase and vice-versa is presented. Temperature dependent iron precipitation and dissolution in float-zone grown silicon wafers is experimentally investigated. A quantitative analysis of iron silicide precipitate stability and dissolution with respect to time and temperature is also presented. Precipitation of iron in silicon was analyzed by a quantitative assessment of change in interstitial iron using a surface photo voltage minority carrier lifetime analysis technique. Contamination levels of iron in the range 1011 to 1013 atoms/cm3 are investigated. It is concluded that maximum iron precipitation occurs in the temperature range of 500°C to 600°C. Iron precipitation is rapid in this region where more than 90% of the interstitial iron precipitates in a period of 30 minutes. Iron silicide precipitates were found to dissolve above a temperature of 760°C restoring iron back to an interstitial phase in the silicon matrix.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 481: Symposium P – Science and Technology of Semiconductor Surface Preparation , 1997 , 345
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Weber, E.R., Appl. Phys. A 30, 1 (1983).Google Scholar
2. Henley, W.B.,Jastrezbski, L. and Neuse, C., Solid State Tech. 12, 27 (1992).Google Scholar
3. Gilles, D.,Weber, E.R. and Hahn, S.K., Phys. Rev. Lett. 64, 196 (1990).Google Scholar
4. Gallego, J.M. and Miranda, R., J. Appl. Phys. 69, 1377 (1991).Google Scholar
5. Henley, W. B. and Ramappa, D. A., J. Appl. Phys. 82, 589 (1997).Google Scholar
6. Lagowski, J., Edelman, P.,Kontkiewich, A. M., Milic, O., Henley, W., Dexter, M.,Jastrzebski, L. and Hoff, A. M., Appl. Phys. Lett. 63, 3043 (1993).Google Scholar
7. Zoth, G. and Bergholz, W., J. Appl. Phys. 67, 6764 (1990).Google Scholar
8. Turnbull, D., in Solid State Physics Vol.3, edited by Seitz, F. and Turnbull, D. (Academic Press, 1956), p. 225.Google Scholar
9. Ham, F. S., J. Appl. Phys. 30, 1518 (1959).Google Scholar