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IR and Sims Study of Hydrogen Diffusion in RF Sputter Deposited Boron Doped a-Si:H and Undoped a-Ge:H

Published online by Cambridge University Press:  25 February 2011

S. Mitra ,
X.-L. Wu ,
R. Shinar  and
J. Shinar
S. Mitra
Affiliation:
Ames Laboratory - USDOE and Physics Department, Iowa State University, Ames, IA 50011
X.-L. Wu
Affiliation:
Ames Laboratory - USDOE and Physics Department, Iowa State University, Ames, IA 50011
R. Shinar
Affiliation:
Microelectronics Research Center, Iowa State University, Ames, IA 50011.
J. Shinar
Affiliation:
Ames Laboratory - USDOE and Physics Department, Iowa State University, Ames, IA 50011
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Abstract

Secondary ion mass spectrometry (SIMS) and IR measurements of long range deuterium motion in rf sputter deposited (rf sp) p-doped a-Si:H and undoped a-Ge:H are compared to recently published results on undoped rf sp a-Si:H, which exhibited strongly power-law time dependent diffusion constants (exponent α= 0.75±0.1) in films of as-deposited content of di-H and tri-H bonds (usually associated with microvoids) Ndo –4–5 at.%. In pdoped a-Si:H samples where Ndo-l.8–3.8at.%, the diffusion is much faster, but the exponent is similar. In undoped a-Ge:H exhibiting a stretch vibration band indicative of mono-H bonding only, the diffusion is about one order of magnitude faster than in undoped a-Si:H, and α = 0.23. The results are discussed in relation to both the multiple trapping (dispersive) and defect mediated diffusion models.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 595
Copyright
Copyright © Materials Research Society 1989

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References

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