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Ion-Projection Lithography for Submicron Modification of Materials

  • G. Stengl (a1), H. LÖSchner (a1), W. Maurer (a1) and P. Wolf (a1)

Abstract

Ion-Projection Lithography (IPL) is a future production technique for submicron electronic devices, wich combines the advantages of e-beam and X-ray lithography without having their disadvantages. Like electrons, ions can be accelerated, focused and deflected, and as is the case with X-rays, scattering in resist layers is less pronounced as for e-beams. Experimental results of IPL obtained with an Ion-Projection-Lithography-Machine IPLM-01 are presented: Ion images of self supporting masks ten times demagnified with a geometrical resolution < 0.25 μm printed into organic and inorganic resist layers in high volume production oriented times.

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1. Muray, J.J., Semicond. International 7/4, 130, (1984).
2. Brown, W.L., 1984 Internat. Symposion Electron, Ion, Photon Beams,Torrytown
3. Namba, S., Ion Beam Microfabrication, Int. Ion Eng. Congr., Kyoto 1983
4. Brown, W.L., Venkatesan, T., Wagner, A., Solid State Techn. 24/8, 60, (1981).
5. Wagner, A, Solid State Techn. 26/5, 97, (1083).

Ion-Projection Lithography for Submicron Modification of Materials

  • G. Stengl (a1), H. LÖSchner (a1), W. Maurer (a1) and P. Wolf (a1)

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