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Ion-Beam Synthesis of Buried Yttrium Silicide

Published online by Cambridge University Press:  25 February 2011

T.L. Alford  and
J.C. Barbour
T.L. Alford
Affiliation:
Materials Science and Engineering Department, Cornell University, Ithaca, New York 14853, USA
J.C. Barbour
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185, USA
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Abstract

Buried single-crystal YSi1.7 layers have been synthesized using high fluence implants of 330 keV yttrium ions into (111) Si held at 450°C followed by post-implant anneals of 1000°C . Rutherford backscattering spectrometry showed that an implant fluence of 3.6 X 1017 Y/cm2 forms a continuous layer of uniform thickness. Whereas, implant fluences of 1 — 2 x 1017 Y/cm2 form a thin continuous YSi1.7 layer with what are believed to be Y-silicide precipitates above and below the YSi1.7 layer. Strains resulting from the YSi1-7 layers were evaluated from x-ray rocking curves using a double crystal diffractometer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 157: Symposium A – Beam-Solid Interactions: Physical Phenomena , 1989 , 137
Copyright
Copyright © Materials Research Society 1990

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References

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