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Ion-Assisted Deposition of CaF2 Films on (111) Si

Published online by Cambridge University Press:  25 February 2011

J.G. Cook ,
H. Moeller ,
S.R. Das  and
Li Zhongming
J.G. Cook
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, Ontario, CanadaK1A OR6
H. Moeller
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, Ontario, CanadaK1A OR6
S.R. Das
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, Ontario, CanadaK1A OR6
Li Zhongming
Affiliation:
Beijing Solar Energy Research Institute, 3 Huayuan Rd., Haidian District, Beijing, China100013
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Abstract

CaF2 films have been deposited by evaporation onto H-passivated (111) Si in the presence of an rf discharge. The discharge is seen to promote epitaxy. Emission spectroscopy reveals strong CaF2 bands and a weak Ca line, indicating that deposition is largely molecular but that some breakup of the CaF2 molecules occurs in the discharge. Electrical and optical properties of these films were substantially better than those of sputter-deposited films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 268: Symposium K – Materials Modification by Energetic Atoms and Ions , 1992 , 241
Copyright
Copyright © Materials Research Society 1992

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References

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