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Ion Irradiation Induced Amorphous To Quasicrystalline Transformation: Composition Dependence In The Almn System

Published online by Cambridge University Press:  26 February 2011

D. A. Lilienfeld ,
M. Nastasi ,
H. H. Johnson ,
D. G. Ast  and
J. W. Mayer
D. A. Lilienfeld
Affiliation:
Department of Materials Science and Engineering Cornell University, Ithaca, New York 14853
M. Nastasi
Affiliation:
Department of Materials Science and Engineering Cornell University, Ithaca, New York 14853
H. H. Johnson
Affiliation:
Department of Materials Science and Engineering Cornell University, Ithaca, New York 14853
D. G. Ast
Affiliation:
Department of Materials Science and Engineering Cornell University, Ithaca, New York 14853
J. W. Mayer
Affiliation:
Department of Materials Science and Engineering Cornell University, Ithaca, New York 14853
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Abstract

Multilayered Al84Mn16 films ion irradiated with Xe at room temperature transform into an amorphous phase. Subsequent Xe ion irradiation at 150C transforms the amorphous to the quasicrystalline phase. The quasicrystalline structure may be formed in the composition range of 91 atomic % Al to 80 atomic % Al.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 51: Symposium A – Beam-Solid Interactions and Phase Transformations , 1985 , 427
Copyright
Copyright © Materials Research Society 1985

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References

REFERENCES

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