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Ion Implantation and 1 MeV Electron Irradiation of 4H-SiC---Comparison Studies

Published online by Cambridge University Press:  15 March 2011

A. O. Evwaraye ,
S. R. Smith ,
W. C. Mitchel ,
G. C. Farlow  and
M. A. Capano
A. O. Evwaraye
Affiliation:
Department of Physics, University of Dayton, 300 College Park, Dayton, Ohio 45469-2314
S. R. Smith
Affiliation:
University of Dayton Research Institute, 300 College Park, Dayton, Ohio 45469-0178
W. C. Mitchel
Affiliation:
Air Force Research Laboratory, Materials and Manufacturing Directorate AFRL/MLPS Wright-Patterson Air Force Base, OH 45433-7707
G. C. Farlow
Affiliation:
Department of Physics, Wright State University, 3640 Col. Glenn Hwy, Dayton, OH 45435
M. A. Capano
Affiliation:
Department of Electrical and Computer Engineering, Purdue University, West Lafayette IN
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Abstract

Argon ions (Ar+) were implanted into n-type 4H-SiC epitaxial layers at 600 °C. The energy of the ions was 160 keV and at a dose of 2 × 1016 cm−2. After post-implantation annealing at 1600 °C, Schottky diodes were fabricated on the ion implanted samples. Bulk n-type 4H-SiC samples were irradiated at room temperature with 1 MeV electrons at doses of 1 × 1016 to 5.1 × 1017 el/cm2. The current density of the beam was 0.91 μA/cm2. Deep Level Transient Spectroscopy (DLTS) was used to characterize the induced defects. DLTS studies of Ar+ implanted samples showed six defect levels at EC – 0.18 eV, EC – 0.23eV, EC – 0.31eV, EC – 0.38 eV, EC – 0.72 eV, and EC – 0.81 eV. Z1/Z2 defect is the dominant defect in the electron irradiated sample and anneals out completely after 10 minutes at 1000 °C. However, Z1/Z2 defect in Ar+ implanted samples was stable up to 1600 °C. It is suggested that the annealing behavior of Z1/Z2 depends on the source of its formation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 815 , 2004 , J1.4
Copyright
Copyright © Materials Research Society 2004

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