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Ion Dynamics in Low Frequency RF Plasmas

Published online by Cambridge University Press:  21 February 2011

Richard A. Gottscho
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
Daniel L. Flamm
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
Randolph H. Burton
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
Vincent M. Donnelly
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
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Abstract

We describe the use of time-resolved laser-induced fluorescence (TRLIF) and plasma-induced emission (PIE) spectroscopy in studying the dynamics of ion transport, formation, and loss in low frequency RF plasmas, used in plasma etching and deposition. N2+ and Cl2+ ions formed in N2, Cl2, and N2/Cl2 discharges were monitored as a function of both position between the electrodes and magnitude of the applied rf potential. In the discharge center, TRLIF was used to measure ground state ionic lifetimes. In N2/Cl2 mixtures, N2+ was found to charge exchange rapidly with Cl2 and Cl to form Cl2+ and Cl+. In the electrode sheaths, the ion response to the applied potential was evident from periodic depletion of the ion concentration as a result of acceleration by the field. From the spatial variation in the ion concentration time dependence, we deduce that the sheaths expand and contract with the same period as the applied potential.

Type
Research Article
Copyright
Copyright © Materials Research Society 1984

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References

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