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Ion Beam Synthesis of Buried CoSi2 Layers in SiGe Alloys

  • R. Jebasinski (a1), S. Mantl (a1), Chr. Dieker (a1), H. Dederichs (a1), L. Vescan (a1) and R. Butz (a1)...

Abstract

Synthesis of buried, epitaxial CoSi2 layers in Si1−xGex alloys (x =0.48 and x = 0.09) by 100 and 150 keV Co+ ion implantation and subsequent rapid thermal annealing was studied by X-Ray diffraction, Rutherford backscattering spectroscopy, He ion channeling, Auger Eectron Spectroscopy and Transmission Electron Microscopy. Buried single-crystal CoSi2 layers in the Si0.91Ge0.09 alloy containing ≈ 1 at% Ge were formed. The suicide formation causes an outdiffusion of Ge leading to an increase in the Ge concentration of the adjacent SiGe layers. In contrast, in the Si0.52Ge0.48 alloy no buried suicide layers could be produced.

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Ion Beam Synthesis of Buried CoSi2 Layers in SiGe Alloys

  • R. Jebasinski (a1), S. Mantl (a1), Chr. Dieker (a1), H. Dederichs (a1), L. Vescan (a1) and R. Butz (a1)...

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