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Ion Beam, Rapid Thermal, and Laser Mixing Phenomena in Insulators

Published online by Cambridge University Press:  28 February 2011

J. Narayan  and
B.R. Appleton
J. Narayan
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, N.C. 27695
B.R. Appleton
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, T.N. 37830
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Abstract

We have studied mixing of metal overlayers (Ni, Cr, Ti, W, Ta, Zr, Cu) on insulators (SiC, Si3N4, Al2O3, SiO2) after ion beam irradiation, rapid thermal annealing, and pulsed laser irradiation. The nature and amount of mixing varies from stoichiometric to continuous, to ballistic, to no mixing at all. For a given system, the amount of mixing was found to increase with increasing substrate temperature. The enhanced mixing with increasing substrate temperature is correlated with concomitant free energy associated with the reactions. Certain systems such as Cu on Al2O3 do not exhibit mixing, but rearrangement within a few atomic layers at the interface results in enhanced adhesion and no aggregation upon annealing at moderate temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 60: Symposium L – Defect Properties and Processing of High-Technology Nonmetallic Materials , 1985 , 313
Copyright
Copyright © Materials Research Society 1986

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References

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