Hostname: page-component-848d4c4894-xm8r8 Total loading time: 0 Render date: 2024-06-24T23:55:01.606Z Has data issue: false hasContentIssue false
  • English
  • Français

Ion Beam Processed Ir/SiGe Structures

Published online by Cambridge University Press:  15 February 2011

G. Curello ,
R. Gwilllam ,
M. Harry ,
B. J. Sealy ,
T. Rodriguez  and
M. Clement
G. Curello
Affiliation:
Department of Electronic & Electrical Engineering, University of Surrey, Guildford G U2 5XH, Surrey, United Kingdom;
R. Gwilllam
Affiliation:
Department of Electronic & Electrical Engineering, University of Surrey, Guildford G U2 5XH, Surrey, United Kingdom;
M. Harry
Affiliation:
Department of Electronic & Electrical Engineering, University of Surrey, Guildford G U2 5XH, Surrey, United Kingdom;
B. J. Sealy
Affiliation:
Department of Electronic & Electrical Engineering, University of Surrey, Guildford G U2 5XH, Surrey, United Kingdom;
T. Rodriguez
Affiliation:
Departamento de Tecnologia Electronica, E. T.S.I Telecomunicacion, Ciudad Universitaria, 28040 Madrid, Spain.
M. Clement
Affiliation:
Departamento de Tecnologia Electronica, E. T.S.I Telecomunicacion, Ciudad Universitaria, 28040 Madrid, Spain.
Get access

Abstract

The thermal reaction of Ir/SiGe structures following ion implantation induced Ir grain boundary mixing has been studied. The morphology of the final interface has been investigated by Cross-sectional Transmission Electron Microscopy (XTEM) and Rutherford Backscattering Spectrometry (RBS) has been used to detect the redistribution of constituent atoms in the reacted layers. A 20 nm iridium film was deposited in vacuum by electron beam evaporation onto p-Si1-xGex (x = 0.25, 0.33) fully relaxed MBE grown layers. Implantation conditions used were effective in amorphizing the interface-close region of the Ir film and the SiGe substrate. After regrowth, XTEM results show that the interface quality is improved with respect to the material that had not been implanted. RBS results on the other hand show Ge incorporation in the reacted layer to occur in contrast to the non implated case where the Ge piles up at the silicide/SiGe interface. The effect of a second anneal step at higher temperatures (in the range 800°C – 900°C) is also investigated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 402: Symposium H – Silicide Thin Films-Fabrication, Properties and Applications , 1995 , 393
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Xiao, X., Sturm, J.C., Parihar, S.R., Lyon, S.A., Meyerhofer, D., Palfrey, S., and Shallcross, F.V.. IEEE Electron Device Lett., 14(4):199–201, 1993.Google Scholar
[2] Tsaur, B.Y., Weeks, M.M., Trubiano, R., Pellegrini, P.W., and Yew, T.R.. IEEE Trans. Electron Devices Lett., 9(12):650–653, 1988.Google Scholar
[3] Curello, G., Gwilliam, R., Harry, M., Reeson, K.J., Sealy, B.J., Rodriguez, T., and Almendra, A.. E-MRS '95 Symposium L, accepted for publication in J. Crystal Growth, 1995.Google Scholar
[4] Okabayashi, H.. Nucl. Instr. and Meth., B 39:246, 1989.Google Scholar
[5] Ballesteros, C., Rodriguez, T., Leube, J. Jimenez, and Clement, M.. J.Appl.Physics, 77(10), May 1995.Google Scholar
[6] Nastasi, M. and Mayer, J.W.. Mat. Sci. Eng., R12:1–52, 1994.Google Scholar
[7] Kanaya, H., Cho, Y., Hasegawa, F., and Yamaka, E.. Jpn.J.Appl.Phys., 29(6):L850–L852, 1990.Google Scholar
[8] Chung, C.K., Hwang, J., Chang, Y.H., Chen, W.J., and Wang, L.P.. J.Crystal Growth, 126:675–681, 1993.Google Scholar
[9] Curello, G., Gwilliam, R., Harry, M., Wilson, R.J., Sealy, B.J., Rodriguez, T., and Leube, J. Jimenez. Mat. Res. Soc. Symp. Proc., this volume.Google Scholar
[10] Aldrich, D.B., Chen, Y.L., Sayers, D.E., Nemanich, R.J., Asburn, S.P., and Ozturk, M.C..J.Appl.Phys., 77(10):5107–5114, 1995.Google Scholar