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Ion Beam Modification of the Y-Ba-Cu-O System with the Mevva High Current Metal Ion Source

Published online by Cambridge University Press:  21 February 2011

I. G. Brown ,
M. D. Rubin ,
K. M. Yu ,
R. Mutikainen  and
N. W. Cheung
I. G. Brown
Affiliation:
Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720
M. D. Rubin
Affiliation:
Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720
K. M. Yu
Affiliation:
Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720
R. Mutikainen
Affiliation:
Technical Research Center of Finland, Espoo, Finland
N. W. Cheung
Affiliation:
Electrical Engineering & Computer Sciences Department, University of California, Berkeley, CA 94720
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Abstract

We have used high-dose metal ion implantation to ‘fine tune’ the composition of Y-Ba- Cu-O thin films. The films were prepared by either of two rf sputtering systems. One system uses three modified Varian S-guns capable of sputtering various metal powder targets; the other uses reactive rf magnetron sputtering from a single mixed-oxide stoichiometric solid target. Film thickness was typically in the range 2000–5000 A. Substrates of magnesium oxide, zirconia-buffered silicon, and strontium titanate have been used. Ion implantation was carried out using a metal vapor vacuum arc (MEVVA) high current metal ion source. Beam energy was 100–200 keV, average beam current about 1 mA, and dose up to about 1017 ions/cm2. Samples were annealed at 800 – 900°C in wet oxygen. Film composition was determined using Rutherford Backscattering Spectrometry (RBS), and the resistivity versus temperature curves were obtained using a four-point probe method. We find that the zero-resistance temperature can be greatly increased after implantation and reannealing, and that the ion beam modification technique described here provides a powerful means for optimizing the thin film superconducting properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 147: Symposium C – Ion Beam Processing of Advanced Electronic Materials , 1989 , 391
Copyright
Copyright © Materials Research Society 1989

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