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Ion Beam Modification of Cluster-Covered Silicon Surfaces

Published online by Cambridge University Press:  03 September 2012

O. V. Gulko  and
M. T. Zinke-Allmang
O. V. Gulko
Affiliation:
Physics and Astronomy Department, University of Western Ontario, London, Ontario, Canada N6A 3K7, ogulko@julian.uwo.ca, mzinke@uwo.ca
M. T. Zinke-Allmang
Affiliation:
Physics and Astronomy Department, University of Western Ontario, London, Ontario, Canada N6A 3K7, ogulko@julian.uwo.ca, mzinke@uwo.ca
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Abstract

Clusters of independently tailored areal density and size distribution were grown on semiconductor surfaces in ultra-high vacuum and used as masks for selective ion beam modification. First studies were undertaken to characterize the vertical interface between areas exposed to low energy ion beams and areas covered by clusters (crystalline silicon). Selective etching was employed to create a patterned surface as a substrate for heteroepitaxial growth of thick Ge layers to test defect density reduction due to finite size growth areas. The quality of the overlayers is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 438: Symposium A – Materials Modificaton and Synthesis by Ion Beam… , 1996 , 167
Copyright
Copyright © Materials Research Society 1997

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