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Ion Beam Induced Structural and Electrical Modifications in Crystalline and Amorphous Silicon

  • S. Coffa (a1), A. Battaglia (a1) and F. Priolo (a1)


The mechanisms of defect accumulation and dynamic annealing in ion-implanted crystalline and amorphous Si are elucidated by performing conductivity and Raman spec-trascopy measurements in-situ during ion irradiation. In amorphous Si the entire gamut of defect structures has been characterized by analyzing the annealing kinetics from 77 K to ~ 800 K both during and after irradiation. Moreover the modifications in the electronic properties of crystalline Si produced by ion-irradiation have been investigated. The use of in-situ techniques in combination with transmission electron microscopy and deep-level transient spectroscopy allowed us to demonstrate the correlation between structural and electrical defects produced by ion-irradiation in Si.



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1 Vook, F. L. and Stein, H. J., Rad. Eff. 2, 23 (1969).
2 Gibbons, J. F., Proceedings of the IEEE, 60, 1062 (1971).
3 Morehead, F. F. and Crowder, B. L., Rad. Eff. 25, 49 (1980).
4 Svensson, B. G., Jagadish, C. and Williams, J. S., Phys. Rev. Lett. 71, 1860 (1993).
5 Schultz, P. J., Jagadish, C., Ridgway, M. C., Elliman, R. G., Williams, J. S., Phys. Rev. B44, 9118 (1991).
6 Nielsen, B., Holland, O. W., Leung, T. C., Lynn, K. J., J. Appl. Phys. 74, 1636 (1993)
7 Myers, S. M., Nucl. Instr. Meth. 168, 265 (1980).
8 Priolo, F., Poate, J. M., Jacobson, D. C., Batstone, J. L. and Campisano, S. U., Appl. Phys. Lett. 52, 1231 (1988); S. Coffa, J. M. Poate, D. C. Jacobson and F. Priolo, Appl. Phys. A54, 481 (1992 ).
9 Holland, O. W., Fathy, D., Narayan, J. and Oen, O. S., Rad. Eff. 90, 127 (1985).
10 Dennis, J. R. and Hale, E. B., J. Appl. Phys. 49, 1119 (1978)
11 Priolo, F. and Rimini, E., Mater. Sci. Rep. 5, 319 (1990)
12 Im, J. S. and Atwater, H. A., Appl. Phys. Lett. 57, 1766 (1990).
13 Spinella, C., Battaglia, A., Priolo, F. and Campisano, S. U., Europhys. Lett. 16, 313 (1991).
14 Coffa, S., Priolo, F. and Battaglia, A., Phys. Rev. Lett. 70, 3756 (1993).
15 Volkert, C. A., J. Appl. Phys. 70, 3521 (1991).
16 Polk, D. E. and Bodreaux, D. S., Phys. Rev. Lett. 31, 92 (1973).
17 Müller, G. and Kalbitzer, S., Philos. Mag. B38, 241 (1978).
18 Frederickson, J. E., Waddell, C. N., Spitzer, W. G. and Hubler, G. M., Appl. Phys. Lett. 40, 172 (1982).
19 Roorda, S., Sinke, W. C., Poate, J. M., Jacobson, D. C., Dierker, S., Dennis, B. S., Eaglesham, D. J., Spaepen, F. and Fuoss, F., Phys. Rev. B44, 3702 (1991).
20 Battaglia, A., Coffa, S., Priolo, F., Compagnini, G. and Baratta, A., Appl. Phys. Lett. 63, 2204 (1993).
21 Coffa, S., Poate, J. M., Jacobson, D. C., Frank, W. and Gustin, W., Phys. Rev. B45, 8355 (1992).
22 Spitzer, W. G., Huber, G. M. and Kennedy, T. A., Nucl. Instr. Methods B209/210, 309 (1983).
23 van den Hoven, G. N., Liang, Z. N., Nielsen, L. and Custer, J. S., Phys. Rev. Lett. 68, 3714 (1992).
24 Roorda, S., Hakvoort, R. A., van der Veen, A., Stolk, P. A. and Saris, F. W., J. Appl. Phys. 72, 5145 (1992).
25 Mott, N. F. and Davis, E. A., Electronic Processes in Non-Crystalline Materials, Oxford Univ. Press Oxford (1979).
26 Coffa, S., Priolo, F., Glarum, S. H. and Poate, J. M., Nucl. Instr. and Meth. B80/81, 603 (1993).
27 Biersack, J. P. and Haggmark, L. J., Nucl. Instr. and Meth. 174, 257 (1980).
28 Priolo, F., Coffa, S. and Battaglia, A., Nucl. Instr. and Meth. (in press).
29 Müller, G. and LeComber, B. G., Phil. Mag. B43, 419 (1981).

Ion Beam Induced Structural and Electrical Modifications in Crystalline and Amorphous Silicon

  • S. Coffa (a1), A. Battaglia (a1) and F. Priolo (a1)


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