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Ion Beam Induced Percolation Clustering in Al-Fe-Cu Films

Published online by Cambridge University Press:  25 February 2011

C.H. Shang
Affiliation:
Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, CHINA.
B.X. Liu
Affiliation:
also at Center of Condensed Matter and Radiation Physics, CCAST (World Lab.), Beijing.
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Extract

The cencept of percolation can be applied to describe many phase transition problems(l) and various disordered systems(2). An infinite percolation cluster at percolation threshold (Pc) is one of the most prominent fractal system(3). The fractal structure of the percolation clusters makes it possible to connect the universal exponents in percolation transition and the geometrical scaling quantities, like fractal dimension Df. Increasing interest has recently been attractive to produce and study the ideal two-dimensional (2D) percolation films(4,5), which usually composed of a random mixture of crystalline and amorphous phases'(6). In this paper, we first report the direct observation of a percolation cluster consisting of two amorphous phases induced in thin solid films during crystalline-to-amorphous phase trnasformation by ion irradiation.

Type
Research Article
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1 Deutscher, G., Zallen, R. and Adler, J. (ed.), Percolation Structures and Processes (Ann. Isrel Phys. Soc. 5), 1983, (Bristol:Adam-Hilger)Google Scholar
2 Zaller, R., The Physics of Amorphous Solids (Wiley, New York 1983)Google Scholar
3 Mendelbrot, B.B., The Fractal Geometry of Nature (San Francisco, Freeman), 1982.(Chapter 13)Google Scholar
4 Kapitulnik, A. and Deutscher, G., Phys. Rev. Lett. 49, 1982, 1444.Google Scholar
5 Huang, L.J., Liu, B.X. and Li, H-D., J. Phys. CrSolid State Phys. 21, 1988, L51.Google Scholar
6 Garfunkel, G.A. and Weissman, M.B., Phys. Rev. Lett., 55,1985, 296.Google Scholar
7 Huang, L.J., Li, H-D. and Liu, B.X., Applied Physics A 44, 1987, 269.Google Scholar
8 Reich, G.R. and Leath, P.L., J.Stat. Phys. 19, 1978, 611.Google Scholar
9 Stanley, H.E., Proc. Intl. Conf. on Disordered Systems and Localization, Ed. by C.Discastro (Berlin, Springer) 1981; and D.Stauffer, Z. Phys. B 37, 1980,89.Google Scholar
10 Stauffer, D., Phys. Rep. 54, 1979, 174.Google Scholar
11 Voss, R.F., J. Phys. A:Math. and Gen. 17, 1984, L373.Google Scholar
12 Ding, J.R., Huang, L.J. and Liu, B.X., Chinese Physics Letters, 5, 1988, 321.Google Scholar
13 Ding, J.R. and Liu, B.X., J. Materials Research, 1989,in pressGoogle Scholar
14 Liu, B.X., Supplement to Trans, of JIM, 29 1988, 29.Google Scholar