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Ion Beam Etching of CVD Diamond Enhanced by Prior Au and O Implantation.

Published online by Cambridge University Press:  11 February 2011

Patrick W. Leech ,
Geoffrey K. Reeves ,
Anthony S. Holland  and
Mark C. Ridgway
Patrick W. Leech
Affiliation:
CSIRO Manufacture and Infrastructure Technology, Melbourne, AUSTRALIA.
Geoffrey K. Reeves
Affiliation:
CSIRO Manufacture and Infrastructure Technology, Melbourne, AUSTRALIA.
Anthony S. Holland
Affiliation:
RMIT University, School of Electrical and Computer Engineering, Melbourne, AUSTRALIA.
Mark C. Ridgway
Affiliation:
Dept. of Electronic Materials Eng., Australian National University, Canberra, AUSTRALIA.
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Abstract

Diamond films were implanted with Au or O ions at multiple energies in order to produce a uniform region of C vacancies. Analysis of the implanted films by Raman spectroscopy has shown that the proportion of non-diamond or amorphous carbon increased with dose (5 × 1013 − 5 × 1015 ions/cm2). For implantation with Au ions, a complete amorphisation near to the surface was evident at a dose of 5 × 1015 ions/cm2. We have examined the ion beam etch (IBE) rate of the films as a function of the implant species and dose. The etching experiments were performed using either Ar or Ar/O2 gases at a bias energy of 500 -1,000 eV. In Ar gas, the process of sputter etching has produced a similar increase in etch rate with dose for both the Au and O implants. In Ar/ O2 gases, the process of ion-enhanced chemical etching produced greater etch rates than obtained in Ar gas with higher rates for the Au than the O implants.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 750: Symposium Y – Surface Engineering 2002–Synthesis, Characterization and Applications , 2002 , Y5.36
Copyright
Copyright © Materials Research Society 2003

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References

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