Skip to main content Accessibility help
×
Home

Investigations of (1,3-Dimethyl-3-methylsilamethylene - disilacyclobutane) as a Single Source CVD Precursor to Silicon Carbide

  • David J. Larkin (a1), Leonard V. Interrante (a1), John B. Hudson (a2) and Bin Han (a2)

Abstract

The low pressure chemical vapor deposition (LPCVD) of silicon carbide from (CH3)HSiCH2SiCH2 (CH3)CH2 SiH2 (CH 3) on Si(100) has been investigated between 700 and 1100°C at ca. 1.0 torr total pressure using a flow of argon as a carrier gas in a cold-wall LPCVD system. The gaseous byproducts were determined using quadrupole mass spectrometry (QMS) and gas chromatography - Fourier transform IR (FTIR) spectroscopy. The coating surface morphology varied from smooth to a columnar structure with increasing substrate temperature. Film composition and crystallinity were monitored as a function of deposition temperature using Auger electron spectroscopy (AES) and powder XRD.

Copyright

References

Hide All
1. Schlichting, J., Powder Met. Int., 12, 141(1980); J. A. Powell, D. J. Larkin, L. G. Matus, W. J. Choyke, J. L. Bradshaw, L. Henderson, M. Yoganathan, J Yang, P. Pirouz, Appl. Phys. Lett., 56(14), 1353(1990); L. M. Ivanova, G. A. Kazaryan, A. A. Pletyushkin, Izv. Akad.Neorg. Mater., 2(2), 223(1966).; Duncan M. Brown, J. D. Parsons, U.S. Patent No. 4 923 716 (8 May 1990);
2. Auner, N., Davidson, I. M. T., Ijadi-Maghsoudi, S., Lawrence, F. T., Organometallics, 5, 431(1986); V. G. Genchel', N. V. Demidova, N. S. Nametkin, L. E. Gusel'nikov, E. A. Volnina, E. N. Burdasov, V. M. Vdovin, Izv. Akad. Ser. Khim., 10, 2337(1976).
3. O'Neal, H. E., Ring, M. A., J. Organometal. Chem., 213, 419(1981).
4. Lee, W., Interrante, L. V., Czekaj, C., Hudson, J. B., Lenz, K., Sun, B., Mat. Res. Soc. Proc., 131, 431(1989).
5. Kriner, W. A., J. Org. Chem., 29, 1601(1961).
6. Larkin, D. J., Interrante, L. V., Paper in prepar.
7. Thornton, J. A., J. Vac. Sci. Technol., 11, 666(1974).
8. JCPDS Powder Diffraction Files, Card No.-1-1119.
9. Smith, A. L., Spectrochim. Acta, 16, 87(1960).
10. Kulkarn, S. B., in VLSI Electronics :Microstructure Science, ed. by Einspruch, N. C. and Larrabee, G. B. (Academic Press. Inc., 1983), Vol. 6, p. 73. rd
11. CRC Handbook of Chemistry and Physics, 63 aed., editied by Weast, R. C. and Astle, M. J. (Chemical Rubber Publishing Co., 1984), p.B143
12. Davidson, I. M. T., Fenton, A., Ijadi-Maghsoodi, S., Scampton, R. J., Auner, N., Grobe, J., Tillman, N., Barton, T. J., Organometallics, 3, 1593(1984).
13. Schaefer, H. F. III, Acc. Chem. Res., 15, 283(1982); R. T. Conlin, D. L. Wood, J. Am. Chem. Soc. Commun., 103, 1843(1981).

Investigations of (1,3-Dimethyl-3-methylsilamethylene - disilacyclobutane) as a Single Source CVD Precursor to Silicon Carbide

  • David J. Larkin (a1), Leonard V. Interrante (a1), John B. Hudson (a2) and Bin Han (a2)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed