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Investigation of Titanium Silicide Formation Using Secondary Ion Mass Spectrometry

  • Andrew T.S. Wee (a1), Alfred C.H. Huan (a1), W.H. Thian (a1), K.L. Tan (a1) and Royston Hogan (a2)...

Abstract

Secondary ion mass spectrometry (SIMS) and X-ray photoelectron spectroscopy (XPS) are used to investigate Ti silicide formation mechanisms on a series of Ti on Si thin films annealed in ultrahigh vacuum (UHV) at different temperatures and durations. The competition between oxygen diffusion and the silicide formation reaction (the socalled “snowplough” effect) is observed directly, as well as a Ti-Si-O layer. The results from these controlled experiments are compared with those from Ti silicide films formed under rapid thermal annealing (RTA) conditions in a production furnace, with and without a TiW barrier layer.

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1. Murarka, S.P., Silicides for VLSI Applications (Academic, New York, 1983).
2. Thian, W.H., Surface and Interface Studies of Titanium Silicide Formation, Honours dissertation, National University of Singapore, 1994.
3. Heintze, M., Catana, A., Schmid, P.E., Levy, F., Stadelmann, P. and Weiss, P., J. Phys. D: Appl. Phys 23, 1076 (1990).
4. Ponpon, J.P. and Saulnier, A., Appl. Surface Sci. 40, 315 (1990).

Investigation of Titanium Silicide Formation Using Secondary Ion Mass Spectrometry

  • Andrew T.S. Wee (a1), Alfred C.H. Huan (a1), W.H. Thian (a1), K.L. Tan (a1) and Royston Hogan (a2)...

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