Hostname: page-component-8448b6f56d-dnltx Total loading time: 0 Render date: 2024-04-25T00:39:05.637Z Has data issue: false hasContentIssue false
  • English
  • Français

Investigation of the Shape of InGaAs/GaAs Quantum Dots

Published online by Cambridge University Press:  11 February 2011

Susan Y. Lehman ,
Alexana Roshko ,
Richard P. Mirin  and
John E. Bonevich
Susan Y. Lehman
Affiliation:
National Institute of Standards and Technology, 325 Broadway, Boulder, CO 80305
Alexana Roshko
Affiliation:
National Institute of Standards and Technology, 325 Broadway, Boulder, CO 80305
Richard P. Mirin
Affiliation:
National Institute of Standards and Technology, 325 Broadway, Boulder, CO 80305
John E. Bonevich
Affiliation:
National Institute of Standards and Technology, 100 Bureau Drive, Gaithersburg, MD 20899
Get access

Abstract

Three samples of self-assembled In0.44Ga0.56As quantum dots (QDs) grown on (001) GaAs by molecular beam epitaxy (MBE) were studied using atomic force microscopy (AFM) and high-resolution transmission electron microscopy (TEM) in order to characterize the height, faceting, and densities of the QDs. The cross-sectional TEM images show both pyramidal dots and dots with multiple side facets. Multiple faceting has been observed only in dots more than 8.5 nm in height and allows increased dot volume without a substantial increase in base area. Addition of a GaAs capping layer is found to increase the diameter of the QDs from roughly 40 nm to as much as 200 nm. The areal QD density is found to vary up to 50 % over the central 2 cm x 2 cm section of wafer and by as much as 23 % on a length scale of micrometers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 737 , 2002 , E13.40
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Zhang, K., Heyn, C., Hansen, W. et al., Appl. Phys. Lett. 76, 2229 (2000).Google Scholar
Zhang, K., Falta, J., Schmidt, T. et al., Pure Appl. Chem. 72, 199 (2000).Google Scholar
3. Grundmann, M., Ledentsov, N. N., Heitz, R. et al., Phys. Status Solidi B 188, 249 (1995).Google Scholar
4. Bruls, D. M., Vugs, J. W. A. M., Koenraad, P. M. et al., Appl. Phys. Lett. 81, 1708 (2002).Google Scholar
5. Kaizu, T. and Yamaguchi, K., Jpn. J. Appl. Phys. Part 1 40, 1885 (2001).Google Scholar
6. Lee, H., Yang, W. D., Sercel, P. C. et al., J. Electron. Mater. 28, 481 (1999).Google Scholar
7. Lee, H., Lowe-Webb, R., Yang, W. D. et al., Appl. Phys. Lett. 72, 812 (1998).Google Scholar
8. Saito, H., Nishi, K., and Sugou, S., Appl. Phys. Lett. 74, 1224 (1999).Google Scholar
9. Anders, S., Kim, C. S., Klein, B. et al., Phys. Rev. B 66, 125309 (2002).Google Scholar
10. Tromp, R. M., Ross, F. M., and Reuter, M. C., Phys. Rev. Lett. 84, 4641 (2000).Google Scholar