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Investigation of the Cobalt Segregation and the Structure of a Grain Boundary in Silicon

Published online by Cambridge University Press:  26 February 2011

T. Tütken
Affiliation:
IV.Phys.Inst., University of Göttingen, 34 Göttingen, FRG
W. Schröter
Affiliation:
IV.Phys.Inst., University of Göttingen, 34 Göttingen, FRG
H.J. Möller
Affiliation:
Institute of Semiconductor Technology, Technical University Hamburg Harburg, 2100 Hamburg 90, FRG
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Abstract

An atomic model of the structure of a <001> ∑ = 13 grain boundary is proposed. The segregation of cobalt at the same grain boundary is investigated by M∑ϐbauer spectroscopy, autoradiography and the I6/I14 method quantitatively. The results, which are consistent with the assumption that CoSi2 precipitates are formed, are discussed in view of the atomic structure.

Type
Research Article
Copyright
Copyright © Materials Research Society 1988

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References

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