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Investigation of NBTI Recovery During Measurement

Published online by Cambridge University Press:  01 February 2011

Robert Entner ,
Tibor Grasser ,
Hubert Enichlmair  and
Rainer Minixhofer
Robert Entner
Affiliation:
entner@iue.tuwien.ac.at, Christian Doppler Laboratory for TCAD in Microelectronics, TU Wien, Gusshausstrasse 27-29/E360, Vienna, Vienna, 1040, Austria, +43 1 58801 36050, +43 1 58801 36099
Tibor Grasser
Affiliation:
grasser@iue.tuwien.ac.at, Christian Doppler Laboratory for TCAD in Microelectronics, TU Wien, Gusshausstrasse 27-29/E360, Vienna, 1040, Austria
Hubert Enichlmair
Affiliation:
hubert.enichlmair@austriamicrosystems.com, Austriamicrosystems, Unterpremstaetten, N/A, 8141, Austria
Rainer Minixhofer
Affiliation:
rainer.minixhofer@austriamicrosystems.com, Austriamicrosystems, Unterpremstaetten, N/A, 8141, Austria
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Abstract

In this work we present a rigorous investigation of the negative bias temperature instability (NBTI) recovery process during measurement intervals in comparison to the numerical solution of an extended reaction-diffusion (RD) model. In contrast to previous work, the RD model has been implemented in a multi-dimensional device simulator and is solved self-consistently together with the semiconductor device equations. This allows us to directly use many commonly approximated quantities such as the oxide electric field and the interface hole concentration in a self-consistent manner. In addition, the influence of the trapped charges can be more accurately considered by using a distributed Shockley-Read-Hall interface trap-charge model which has been coupled to the RD model. Thus, due to the self-consistent solution procedure, also the feedback of these charged interface-states on the Poisson equation is considered which influences the observed threshold voltage shift. Experimental data confirm the model which has been calibrated to a wide range of temperatures using a single set of parameters.

Keywords

dielectricdevicesoxide
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 917: Symposium E – Gate Stack Scaling – Materials Selection, Role of Interfaces, and Reliability Implications , 2006 , 0917-E03-02
Copyright
Copyright © Materials Research Society 2006

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