Feasibility of lo-hi-lo and delta-doped structures for evaluation of high-field silicon carbide material properties is investigated. Delta-doped structures are grown using the hot-wall CVD technique. Aluminum and nitrogen doping profiles are demonstrated with FWHM below 10 nm. Nitrogen doping transients are found to be slower than those for aluminum. The growth interrupt technique has been developed for achieving narrow nitrogen doping peaks. Lo-hi-lo structures were fabricated using the implantation-and-regrowth technique. Structures with confined avalanche multiplication are demonstrated using the lo-hi-lo and delta doping techniques. The effect of substrate imperfections on early avalanche breakdown is investigated using confined avalanche multiplication devices.