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Investigation of Irradiation Damage in Silicon Dioxide Polymorphs using Cathodoluminescence Microanalysis.

Published online by Cambridge University Press:  21 March 2011

Marion A. Stevens-Kalceff
Marion A. Stevens-Kalceff*
Affiliation:
Department of Applied Physics, University of Technology, Sydney. PO Box 123 Broadway NSW 2007AUSTRALIAMarion.Stevens-Kalceff@uts.edu.au
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Abstract

Cathodoluminescence (CL) Microanalysis (spectroscopy and microscopy) provides unique high sensitivity, high spatial resolution information about the defect structure and distribution of defects in wide band gap materials and therefore is an ideal technique with which to investigate the microstructural processes induced by irradiation. CL microanalytical techniques allow the in situ monitoring and post irradiation assessment of electron irradiation induced damage. Changes in the defect structure and surface topography of electron irradiated silicon dioxide polymorphs and related silicates including pure crystal quartz, pure silica glasses, pure amorphous fused quartz and alkali-borosilicate glasses, have been investigated and compared using CL microanalysis and Scanning Probe Microscopy (SPM) techniques. CL and SPM evidence shows all specimens are sensitive to electron irradiation. CL evidence is consistent with the production and micro-segregation of irradiation induced defects. The observed damage is highly correlated with the electron irradiation induced changes in the surface topography of the investigated specimens.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 650: Symposium R – Microstructural Processes in Irradiated Materials-2000 , 2000 , R9.5/O14.5
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Yacobi, B. and Holt, D., Cathodoluminescence Microscopy of Inorganic Solids.(Plenum Press, New York, 1990).Google Scholar
2. Steeds, J., in Encyclopedia of Applied Physics V3, edited by Trigg, G. 121 (VCH, New York, 1992)Google Scholar
3. Silica; Vol. 29, edited by Heaney, P.J., Prewitt, C.T., and Gibbs, G.V. (Mineralogical Society of America, Washington DC, 1994).Google Scholar
4. Weber, W.J., Ewing, R.C., Angell, C.A., Arnold, G.W., Cormack, A.N., Delaye, J.M., Griscom, D.L., Hobbs, L.W., Navrotsky, A., Price, D.L., Stoneham, A.M. and Weinberg, M.C.. J. Mater. Res 12, 1946 (1997).Google Scholar
5. Ewing, R.C., Weber, W.J. and Clinard, F.W. Jr., Prog. in Nucl. Energy 29, 63 (1995).Google Scholar
6. Weber, W.J. and Ewing, R.C.. Mat. Res. Soc. Symp. Proc. 439 607 (1997)Google Scholar
7. Stevens-Kalceff, M.A. and Phillips, M. R., Phys.Rev.B. 52, 3122 (1995).Google Scholar
8. Stevens-Kalceff, M.A., Phys.Rev.B. 57, 5674 (1998).Google Scholar
9. Sawyer Research Products Inc., OH, USAGoogle Scholar
10. National Scientific Co., PA, USAGoogle Scholar
11. Thermal Syndicate Ltd. UKGoogle Scholar
12. Corning Inc. NY, USAGoogle Scholar
13. Schott Corp. NY, USAGoogle Scholar
14. Chance Propper Ltd, UKGoogle Scholar
15. Griscom, D.L., Jour.Cer.Soc.Japan 99, 923 (1991).Google Scholar
16. Skuja, L., Proc. NATO ASI Defects in SiO2, April 2000 (to be published, 2001)Google Scholar
17. Shelby, J.E.. J.Appl.Phys. 51, 2561 (1980)Google Scholar
18. Stevens-Kalceff, M.A., Phys.Rev.Lett. 84, 3137 (2000).Google Scholar
19. Stevens-Kalceff, M.A., Phillips, M.R., Toth, M, Moon, A.R., Jamieson, D.N., Orwa, J.O. and Prawer, S.. Mat. Res. Soc. Symp. Proc. 540, 43 (1999)Google Scholar
20. Stevens-Kalceff, M.A., Phillips, M.R., and Moon, A.R., J.Appl.Phys. 80, 4308 (1996).Google Scholar
21. Cazaux, J., J.Appl.Phys. 59, 1418 (1986).Google Scholar
22. Stevens-Kalceff, M.A., Thorogood, G. J. and Short, K.T.. J. Appl. Phys. 86, 205 (1999).Google Scholar