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Investigation of Inhomogeneous In-Plane Strain Relaxation in Si/SiGe Quantum Wires by High Resolution x-ray Diffraction

  • Y. Zhuang (a1), C. Schelling (a1), T. Roch (a1), A. Daniel (a1), F. Schäffler (a1), G. Bauer (a1), J. Grenzer (a2), U. Pietsch (a2) and S. Senz (a3)...


The structural properties of Si/SiGe quantum wires, which were grown by local solid source molecular beam epitaxy through a Si3N4/SiO2 wire-like shadow mask, were investigated by means of high resolution x-ray coplanar and x-ray grazing incidence diffraction, as well as by transmission electron microscopy. High resolution x-ray coplanar diffraction was used to obtain the average in-plane strain in Si/SiGe wires before and after removing the Si3N4/SiO2 shadow mask. x-ray grazing incidence diffraction measurements were performed to obtain information on the shape of the wires and on the depth-dependent strain relaxation. A finite element method was used to calculate the strain distribution in the Si/SiGe wires and in the Si substrate which clearly show the influence of the Si3N4/SiO2 shadow masks on the strain status of the Si/SiGe wires in agreement with the experimental data.



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