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Investigation of Growth Evolution in c-Axis SrBi2Nb2O9 Epitaxial Thin Films

Published online by Cambridge University Press:  10 February 2011

J. Lettieri
Affiliation:
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802–5005
M. A. Zurbuchen
Affiliation:
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802–5005
G. W. Brown
Affiliation:
Center for Materials Science, Los Alamos National Laboratory, Los Alamos, NM 87545
Y. Jia
Affiliation:
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802–5005
W. Tian
Affiliation:
Department of Materials Science and Engineering, The University of Michigan, Ann Arbor, MI 48109–2136
X. Q. Pan
Affiliation:
Department of Materials Science and Engineering, The University of Michigan, Ann Arbor, MI 48109–2136
M. E. Hawley
Affiliation:
Center for Materials Science, Los Alamos National Laboratory, Los Alamos, NM 87545
D. G. Schlom
Affiliation:
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802–5005
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Abstract

(001)-oriented epitaxial SrBi2Nb2O9 thin films have been grown by pulsed laser deposition on (001) SrTiO3 and (001) LaAlO3—Sr2AlTaO6 substrates at optimized growth conditions. 4-circle x-ray diffraction, Rutherford backscattering spectrometry, and transmission electron microscopy reveal highly oriented epitaxial films. Atomic force microscopy indicates spiral growth for films grown on SrTiO3 and layer-by-layer growth for films grown on LaAlO3—Sr2AlTaO6.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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References

1. Aurivillius, B., Ark. Kemi 1, 463 (1950); 1,499 (1950); 2, 519 (1951); 5, 39 (1953).Google Scholar
2. Araujo, C. A-Paz de, Cuchiaro, J. D., McMillan, L. D., Scott, M. C., and Scott, J. F., Nature (London) 374, 627 (1995).Google Scholar
3. Scott, J. F., Ross, F. M., Araujo, C. A. Paz de, Scott, M. C., and Huffman, M., Mater. Res. Bull. 21 (7), 33 (1996).10.1557/S0883769400035892Google Scholar
4. Jiang, Q. D., Huang, Z. J., Jin, P., Chen, C. L., Brazdeikis, A., Sun, Y. Y., Feng, H. H., Benneker, A., and Chu, C. W., Surf. Sci. Lett. 405, L554 (1998).10.1016/S0039-6028(98)00167-8Google Scholar
5. Yeadon, M., Aindow, M., Wellhöfer, F., and Abell, J.S., J. Cryst. Growth 172, 145 (1997).10.1016/S0022-0248(96)00723-3Google Scholar
6. M. Kawasaki Takahashi, K., Maeda, T., Tsuchiya, R., Shinohara, M., Ishiyama, O., Yonezowa, T., Yoshimoto, M., and Koinuma, H., Science, 266, 1540 (1994).Google Scholar
7. Koster, G., Kropman, B. L., Rijnders, G., Blank, D. H. A., and Rogalla, H., Appl. Phys. Lett. 73, 2920 (1998).10.1063/1.122630Google Scholar
8. Clark, J. C., Maria, J-P., Hubbard, K. J., and Schlom, D. G., Rev. Sci. Instrum. 68, 2538 (1997).10.1063/1.1148156Google Scholar
9. Lettieri, J., Jia, Y., Zurbuchen, M. A., Schlom, D. G., Si, W., Xi, X. X., submitted to Appl. Phys. Lett.Google Scholar
10. Lettieri, J., Jia, Y., Fulk, S. Weber, C. I., Schlom, D. G., Brown, G. W., Hawley, M. E., Uecker, R., and Reiche, P., submitted to J. Mater. Res.Google Scholar
11. Lettieri, J., Jia, Y., Urbanik, M., Weber, C. I., Maria, J-P. Schlom, D. G., Li, H., Ramesh, R., Uecker, R., and Reiche, P., Appl. Phys. Lett. 73, 2923 (1998).Google Scholar