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Investigation of Ge, As, and Au Diffusion in Non-Alloyed Epitaxial Au-Ge Ohmic Contacts to n-GaAs Using Secondary Ion Mass Spectroscopy Backside Sputter Depth-Profiling

  • H. S. LEE (a1), R. T. Lareau (a1), S. N. Schauer (a1), R. P. Moerkirk (a1), K. A. Jones (a1), S. Elagoz (a2), W. Va Vra (a2) and R. Clarke (a2)...


A SIMS backside sputter depth-profile technique using marker layers is employed to characterize the diffusion profiles of the Ge, As, and Au in the Au-Ge contacts after annealing at 320 C for various times. This technique overcomes difficulties such as ion beam mixing and preferential sputtering and results in high depth resolution measurements since diffusion profiles are measured from low to high concentration. Localized reactions in the form of islands were observed across the surface of the contact after annealing and were composed of Au, Ge, and As, as determined by SIMS imaging and Auger depth profiling. Backside SIMS profiles indicate both Ge and Au diffusion into the GaAs substrate in the isalnd regions. Ohmic behavior was obtained after a 3 hour anneal with a the lowest average specific contact resistivity found to be ∼ 7 × 100−6 Ω- cm2.



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1. See for example, Palmstrøm, C. J. and Morgan, D.V., in Gallium Arsenide: Materials. Devices. and Circuits,edited by Howes, M. J. and Morgan, D. V. (Wiley, New York, 1985), p. 195.
2. Aina, O., Katz, W., Baliga, B. J., and Rose, K., J. Appl. Phys. 53, 777 (1982).
3. Werthen, J. G. and Scifres, D. R., J. Appl. Phys. 52, 1127 (1981).
4. Kirchner, P. D., Jackson, T. N., Pettit, G. D., and Woodall, J. M., Appl. Phys. Lett. 47, 26 (1985).
5. Barnes, P. A. and Cho, A. Y., Appl. Phys. Lett. 33, 651 (1978).
6. Devlin, W. J., Wood, C. E. C., Stall, R., and Eastman, L. F., Solid-St. Electron. 23 823 (1980).
7. Stall, R. A., Wood, C. E. C., Board, K., Dandekar, N., Eastman, L. F., and Devlin, J., J. Appl. Phys. 52, 4062 (1981).
8. Dornath-Mohr, M. A., Cole, M. W., Lee, H. S., Fox, D. C., Eckart, D. W., Yerke, L., Wrenn, C. S., Lareau, R. T., Chang, W. H., Jones, K. A., and Cosandey, F., J. Electron. Mater. 19, 1247 (1990).
9. Shappirio, J. R., Lareau, R. T., Lux, R. A., Finnegan, J. J., Smith, D. D., Heath, L. S., and Taysing-Lara, M., J. Vac. Sci. Tech. A5, 1503 (1987).
10. Lareau, R. T., in SIMS VI, edited by Benninghoven, A., Huber, A. M., and Werner, H. W. (J. Wiley, New York, 1988), p. 437.
11. Palmstrøm, C. J., Schwarz, S. A, Yablonovitch, E., Schwarz, C. L., Florez, L., Gmitter, T. J., Marshall, E. D., and Lau, S. S., J. Appl. Phys. 67, 334 (1990).
12. Schwarz, S. A, Palmstrøm, C. J., Schwarz, C. L., Sands, T., Shantharama, L. G., arbison, J. P., Florez, L., Marshall, E.D., Han, C. C., and Lau, S. S., J. Vac. Sci. Tech. A&, 2079 (1990).
13. Cole, M. W., (unpublished).
14. Lee, H. S., (unpublished).
15. Iladis, A. and Singer, K. E., Solid St. Comm. 49, 99 (1984).
16. Yeh, L. L. and Holloway, P. H., in Advances in Materials, Processing and Devices in III-V Compound Semiconductors, edited by Dadana, D. K., Eastman, L. F., and Dupuis, R. (Mater. Res. Soc. Proc. 144, Pittsburgh, PA 1988) pp. 607
17. Weizer, V. G. and Fatemi, N. S., J. Appl. Phys. 64, 4618 (1988).
18. Shaw, D., Atomie Diffusion in Semiconductors, (Plenum, New York, 1973).
19. Sokolov, V. l. and Shishiyanu, F. S., Sov. Phys. Solid State 6, 265 (1964).
20. Byers, R., Bum, K. B., and Sinclair, R., J. Appl. Phys. 61, 2195 (1987).
21. Ogawa, M., J. Appl. Phys 51, 406 (1980).


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