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Investigation of Filamentation Damage Resulting from Electromagnetic Breakdown in Si Bi-Polar Diodes

Published online by Cambridge University Press:  15 February 2011

S. Wang ,
M. Dudley ,
C. Fazi  and
D. Gordon-Smnith
S. Wang
Affiliation:
Dept. of Materials Science and Engineering, SUNY at Stony Brook, NY 11794-2275.
M. Dudley
Affiliation:
Dept. of Materials Science and Engineering, SUNY at Stony Brook, NY 11794-2275.
C. Fazi
Affiliation:
U.S. Army Research Laboratory, 2800 Powder Mill Rd, Adelphi, MD 20783.
D. Gordon-Smnith
Affiliation:
Dept. of Engineering, University of Warwick, Coventry, CV4 7AL, UK.
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Abstract

Synchrotron white beam X-ray topographic studies of damage induced during the R-F electromagnetic breakdown of bi-polar diodes on silicon have been carried out. Filaments associated with damage processes in reverse bias, have been observed close to the surface of the Si epilayer, using the surface sensitive grazing Bragg-Laue technique. Ray-tracing experiments have enabled us to determine the exact lateral location of the filament to be at the edge of the metallization region, at the junction between it and the metallic contact. The influence of these results on hardening technologies is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 307: Symposium L – Applications of Synchrotron Radiation Techniques to Materials Science , 1993 , 237
Copyright
Copyright © Materials Research Society 1993

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References

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