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Investigation of Electronic Properties of Porous Silicon by the Pulsed Surface Photovoltage Technique
Published online by Cambridge University Press: 28 February 2011
Abstract
Electronic states in por-Si are investigated by the pulsed surface photovoltage technique using the por-Si/c-Si interface as probe. The values of the potentials at the por-Si/n-Si and at the por-Si/p-Si interface are -0.05 V and +0.47 V, respectively. Non-monotonous photovoltage transients related to trapping in por-Si are observed. The traps can be annealed at 150°C and generated in H20 atmosphere.
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- Copyright © Materials Research Society 1995
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